A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0°-8° is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the 105 faceting at atomic scale. © 2010 The American Physical Society.
Persichetti, L., Sgarlata, A., Fanfoni, M., Balzarotti, A. (2010). Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle. PHYSICAL REVIEW LETTERS, 104(3), 036104 [10.1103/PhysRevLett.104.036104].
Shaping Ge Islands on Si(001) Surfaces with Misorientation Angle
Persichetti L.
;Balzarotti A.
2010-01-01
Abstract
A complete description of Ge growth on vicinal Si(001) surfaces in the angular miscut range 0°-8° is presented. The key role of substrate vicinality is clarified from the very early stages of Ge deposition up to the nucleation of 3D islands. By a systematic scanning tunneling microscopy investigation we are able to explain the competition between step-flow growth and 2D nucleation and the progressive elongation of the 3D islands along the miscut direction [110]. Using finite element calculations, we find a strict correlation between the morphological evolution and the energetic factors which govern the 105 faceting at atomic scale. © 2010 The American Physical Society.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
