Germanium-on-silicon technology has been thoroughly studied in the last 20 years and it now reached a high readiness level and it is mature for industrial development. In particular, germanium has been employed in a more-than-Moore pathway for the enhancement of silicon optical properties and the extension of the sensitivity spectrum of Si-based photodetectors. Typically, Ge-on-Si photodetectors exploit the extended visible to near-infrared absorption spectrum of Ge; we propose a dual diode Ge/Si structure where both semiconductors are used for the realization of photodetectors with a tunable sensitivity spectrum that can be completely electrically shifted from the visible to the near infrared wavelength range.
De Iacovo, A., Ballabio, A., Frigerio, J., Colace, L., Isella, G. (2019). Design and Simulation of Ge-on-Si Photodetectors With Electrically Tunable Spectral Response. JOURNAL OF LIGHTWAVE TECHNOLOGY, 37(14), 3517-3525 [10.1109/JLT.2019.2917590].
Design and Simulation of Ge-on-Si Photodetectors With Electrically Tunable Spectral Response
De Iacovo A.
;Colace L.;Isella G.
2019-01-01
Abstract
Germanium-on-silicon technology has been thoroughly studied in the last 20 years and it now reached a high readiness level and it is mature for industrial development. In particular, germanium has been employed in a more-than-Moore pathway for the enhancement of silicon optical properties and the extension of the sensitivity spectrum of Si-based photodetectors. Typically, Ge-on-Si photodetectors exploit the extended visible to near-infrared absorption spectrum of Ge; we propose a dual diode Ge/Si structure where both semiconductors are used for the realization of photodetectors with a tunable sensitivity spectrum that can be completely electrically shifted from the visible to the near infrared wavelength range.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
