Photodetectors based on a Ge-on-Si platform were widely studied over the last two decades, rapidly becoming the technology of choice for CMOS-integrated optoelectronic systems operating in the near infrared. Recently, we demonstrated a proof-of-concept device realized with a back-to-back, Ge-on-Si double photodiode with dual-band optical sensitivity and voltage-tunablity characteristics. Such a device represents the cornerstone for the development of integrated imaging systems operating both in the visible and in the near infrared spectral ranges. To achieve this ambitious goal, however, several technology improvements are needed starting from the fabrication of a multipixel array of dual-band photodetectors. Moreover, given the peculiar electronic behavior of the proposed device, specific readout electronics must be developed and integrated onto a CMOS platform. In this paper we demonstrate the operation of a Ge-on-Si multipixel array with a custom-developed readout integrated chip. We show a complete system characterization, also demonstrating its imaging capabilities with a simple experiment for the determination of the intensity profile of two different laser beams.
De Iacovo, A., Mitri, F., Ballabio, A., Frigerio, J., Isella, G., Ria, A., et al. (2022). Dual-band Ge-on-Si Photodetector array with custom, integrated readout electronics. IEEE SENSORS JOURNAL [10.1109/JSEN.2022.3141929].