A method of controlled diamond doping, consisting in introducing a solid-state silicon source into a CVD reactor chamber is proposed and implemented. Such an approach is tested during diamond film and isolated nanocrystallite growth on silicon, molybdenum, sapphire, copper, and quartz substrates. The approach to nanodiamond doping with silicon during CVD synthesis, developed in this paper, is promising for developing stable highly efficient luminescent nanodiamonds. © 2011 Allerton Press, Inc.

Sedov, V.S., Vlasov, I.I., Ralchenko, V.G., Khomich, A.A., Konov, V.I., Fabbri, A., et al. (2011). Gas-phase growth of silicon-doped luminescent diamond films and isolated nanocrystals. BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 38(10), 291-296 [10.3103/S1068335611100034].

Gas-phase growth of silicon-doped luminescent diamond films and isolated nanocrystals

Fabbri A.;Conte G.
2011

Abstract

A method of controlled diamond doping, consisting in introducing a solid-state silicon source into a CVD reactor chamber is proposed and implemented. Such an approach is tested during diamond film and isolated nanocrystallite growth on silicon, molybdenum, sapphire, copper, and quartz substrates. The approach to nanodiamond doping with silicon during CVD synthesis, developed in this paper, is promising for developing stable highly efficient luminescent nanodiamonds. © 2011 Allerton Press, Inc.
Sedov, V.S., Vlasov, I.I., Ralchenko, V.G., Khomich, A.A., Konov, V.I., Fabbri, A., et al. (2011). Gas-phase growth of silicon-doped luminescent diamond films and isolated nanocrystals. BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 38(10), 291-296 [10.3103/S1068335611100034].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/398594
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