Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.

Boota, M., Houwman, E.P., Lanzara, G., & Rijnders, G. (2020). Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films. JOURNAL OF APPLIED PHYSICS, 128(5), 055302 [10.1063/5.0004479].

Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films

Boota M.;Lanzara G.;
2020

Abstract

Pure perovskite phase, (001)-oriented, epitaxial thin films of (Pb(Mg1/3Nb2/3)O3)0.67-(PbTiO3)0.33 (PMN-PT) were fabricated on single crystal, (001)-oriented SrTiO3 substrates using a hard (Fe-doped) and soft doped (Nb-doped) PZT(52/48) interfacial layer. The effect of different interface layers on the structural and ferroelectric properties of the PMN-PT films was investigated in detail. A significant self-bias voltage in the PMN-PT films can be introduced by using an appropriate interfacial layer. There are significant differences in polarization for different types of doped and undoped interface layers and a doubling of the relative dielectric constant was observed for the Nb-doped interfacial layer. Device properties remain stable up to at least 108 cycles.
Boota, M., Houwman, E.P., Lanzara, G., & Rijnders, G. (2020). Effect of a thin (doped) PZT interfacial layer on the properties of epitaxial PMN-PT films. JOURNAL OF APPLIED PHYSICS, 128(5), 055302 [10.1063/5.0004479].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/402133
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