The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains. © 1995.
De Cesare, G., Salvatori, S., Vincenzoni, R., Ascarelli, P., Cappelli, E., Pinzari, F., et al. (1995). On the electrical properties of polycrystalline diamond films on silicon. DIAMOND AND RELATED MATERIALS, 4(5-6), 628-631 [10.1016/0925-9635(94)05294-8].
On the electrical properties of polycrystalline diamond films on silicon
Salvatori S.
Writing – Original Draft Preparation
;Vincenzoni R.;Galluzzi F.Writing – Review & Editing
1995-01-01
Abstract
The electrical behaviour of metal/diamond/silicon structures was investigated by current-voltage measurements as a function of temperature in the range 20-270 °C. The results were related to the morphology and composition of the diamond film by a nonlinear electrical model, taking into account both a temperature-independent conductance through highly defective regions and a temperature-dependent field-activated conductance through bulk diamond grains. © 1995.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
