We introduce a new metasurface-based wideband polarization converter with a switchable notch band. Unlike previous structures, the proposed structure utilizes the properties of p-i-n diodes to offer switchable functionalities between single/dual-frequency bands. Specifically, during the on-state of diodes, an incident linearly polarized (LP) plane wave of frequency range 4.87-11.41 GHz is converted into an orthogonally linearly polarized (OLP) wave. Conversely, when the p-i-n diodes are set in their off-state, the structure converts the LP plane wave into an OLP wave within two adjacent frequency bands (4.80-7.31 GHz and 9.82-11.43 GHz) separated by a notch region (7.44-7.55 GHz). The notch band is characterized by an LP-full reflection behavior that can be exploited for stealth antenna applications. The working principle of the proposed device and its physical mechanisms are discussed. Finally, a prototype is fabricated and measured and the experimental results confirm the effectiveness of the proposed structure.
Pramanik, S., Bakshi, S.C., Koley, C., Mitra, D., Monti, A., Bilotti, F. (2023). Active metasurface-based wideband polarization converter with a switchable notch. IEEE TRANSACTIONS ON ELECTROMAGNETIC COMPATIBILITY, 65(4), 1081-1089 [10.1109/temc.2023.3288068].
Active metasurface-based wideband polarization converter with a switchable notch
Monti, Alessio;Bilotti, Filiberto
2023-01-01
Abstract
We introduce a new metasurface-based wideband polarization converter with a switchable notch band. Unlike previous structures, the proposed structure utilizes the properties of p-i-n diodes to offer switchable functionalities between single/dual-frequency bands. Specifically, during the on-state of diodes, an incident linearly polarized (LP) plane wave of frequency range 4.87-11.41 GHz is converted into an orthogonally linearly polarized (OLP) wave. Conversely, when the p-i-n diodes are set in their off-state, the structure converts the LP plane wave into an OLP wave within two adjacent frequency bands (4.80-7.31 GHz and 9.82-11.43 GHz) separated by a notch region (7.44-7.55 GHz). The notch band is characterized by an LP-full reflection behavior that can be exploited for stealth antenna applications. The working principle of the proposed device and its physical mechanisms are discussed. Finally, a prototype is fabricated and measured and the experimental results confirm the effectiveness of the proposed structure.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
