We are reporting on high quality epitaxial thin films of [Pb(Mg1/3Nb2/3)O-3](0.67)-(PbTiO3)(0.33) [PMN-PT (67/33)]. These films were deposited on (001) oriented, vicinal SrTiO3 single crystal substrates, using 1 mol. % niobium-doped Pb(Zr-0.52,Ti-0.48)O-3 (Nb-PZT) as an interfacial layer. The functional properties of the epitaxial PMN-PT (67/33) thin films were investigated as a function of the layer thickness of the Nb-PZT layer. The deposited hetero-structures are perovskite phase pure and fully (001)-oriented. The variation in Nb-PZT interfacial layer thickness results in an increasing trend change of the in-plane lattice parameter of that layer, which in turn causes a decrease in the c/a ratio of the PMN-PT film on top. The most noticeable effect related to this is a decrease in built-in-bias (imprint) voltage. Thus, the built-in bias can be tuned by changing the interfacial layer thickness. The ferroelectric capacitor properties are found to be most stable for the thinnest interfacial layers under a high number (10(8)) of switching cycles.
Boota, M., Houwman, E.P., Lanzara, G., Rijnders, G. (2023). Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films. JOURNAL OF APPLIED PHYSICS, 133(14) [10.1063/5.0139426].
Effect of a niobium-doped PZT interfacial layer thickness on the properties of epitaxial PMN-PT thin films
Boota, M.;Lanzara, G.;
2023-01-01
Abstract
We are reporting on high quality epitaxial thin films of [Pb(Mg1/3Nb2/3)O-3](0.67)-(PbTiO3)(0.33) [PMN-PT (67/33)]. These films were deposited on (001) oriented, vicinal SrTiO3 single crystal substrates, using 1 mol. % niobium-doped Pb(Zr-0.52,Ti-0.48)O-3 (Nb-PZT) as an interfacial layer. The functional properties of the epitaxial PMN-PT (67/33) thin films were investigated as a function of the layer thickness of the Nb-PZT layer. The deposited hetero-structures are perovskite phase pure and fully (001)-oriented. The variation in Nb-PZT interfacial layer thickness results in an increasing trend change of the in-plane lattice parameter of that layer, which in turn causes a decrease in the c/a ratio of the PMN-PT film on top. The most noticeable effect related to this is a decrease in built-in-bias (imprint) voltage. Thus, the built-in bias can be tuned by changing the interfacial layer thickness. The ferroelectric capacitor properties are found to be most stable for the thinnest interfacial layers under a high number (10(8)) of switching cycles.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
