Sfoglia per Rivista SEMICONDUCTOR SCIENCE AND TECHNOLOGY
Alignment control of self-ordered three dimensional SiGe nanodots
2018-01-01 Yamamoto, Y.; Itoh, Y.; Zaumseil, P.; Schubert, M. A.; Capellini, G.; Montalenti, F; Washio, K.; Tillack, B.
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition
1999-01-01 Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S.
Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition
1999-01-01 Capellini, G; DI GASPARE, Luciana; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S.
Influence of dislocations on vertical ordering of Ge islands in Si/Ge multilayers grown by low pressure chemical vapor deposition
1999-01-01 G., Capellini; L., DI GASPARE; Evangelisti, Florestano; E., Palange; A., Notargiacomo; C. SPINELLA AND S., Lombardo
Optical critical points of SixGe1-x-ySnyalloys with high Si content
2017-01-01 Fischer, Inga A.; Berrier, Audrey; Hornung, Florian; Oehme, Michael; Zaumseil, Peter; Capellini, Giovanni; Von Den Driesch, Nils; Buca, Dan; Schulze, Jã¶rg
Photoluminescence of phosphorus atomic layer doped Ge grown on Si
2017-01-01 Yamamoto, Yuji; Nien, Li wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd
| Titolo | Data di pubblicazione | Autore(i) | File |
|---|---|---|---|
| Alignment control of self-ordered three dimensional SiGe nanodots | 1-gen-2018 | Yamamoto, Y.; Itoh, Y.; Zaumseil, P.; Schubert, M. A.; Capellini, G.; Montalenti, F; Washio, K.; Tillack, B. | |
| Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition | 1-gen-1999 | Capellini, Giovanni; Di Gaspare, L; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S. | |
| Influence of dislocations on vertical ordering of Ge islands in Si Ge multilayers grown by low pressure chemical vapour deposition | 1-gen-1999 | Capellini, G; DI GASPARE, Luciana; Evangelisti, F; Palange, E; Notargiacomo, A; Spinella, C; Lombardo, S. | |
| Influence of dislocations on vertical ordering of Ge islands in Si/Ge multilayers grown by low pressure chemical vapor deposition | 1-gen-1999 | G., Capellini; L., DI GASPARE; Evangelisti, Florestano; E., Palange; A., Notargiacomo; C. SPINELLA AND S., Lombardo | |
| Optical critical points of SixGe1-x-ySnyalloys with high Si content | 1-gen-2017 | Fischer, Inga A.; Berrier, Audrey; Hornung, Florian; Oehme, Michael; Zaumseil, Peter; Capellini, Giovanni; Von Den Driesch, Nils; Buca, Dan; Schulze, Jã¶rg | |
| Photoluminescence of phosphorus atomic layer doped Ge grown on Si | 1-gen-2017 | Yamamoto, Yuji; Nien, Li wei; Capellini, Giovanni; Virgilio, Michele; Costina, Ioan; Schubert, Markus Andreas; Seifert, Winfried; Srinivasan, Ashwyn; Loo, Roger; Scappucci, Giordano; Sabbagh, Diego; Hesse, Anne; Murota, Junichi; Schroeder, Thomas; Tillack, Bernd |
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