Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 ×1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ∼0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ∼2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.

Yamamoto, Y., Nien, L.w., Capellini, G., Virgilio, M., Costina, I., Schubert, M.A., et al. (2017). Photoluminescence of phosphorus atomic layer doped Ge grown on Si. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(10), 104005 [10.1088/1361-6641/aa8499].

Photoluminescence of phosphorus atomic layer doped Ge grown on Si

CAPELLINI, GIOVANNI;
2017-01-01

Abstract

Improvement of the photoluminescence (PL) of Phosphorus (P) doped Ge by P atomic layer doping (ALD) is investigated. Fifty P delta layers of 8 ×1013 cm-2 separated by 4 nm Ge spacer are selectively deposited at 300 °C on a 700 nm thick P-doped Ge buffer layer of 1.4 × 1019 cm-3 on SiO2 structured Si (100) substrate. A high P concentration region of 1.6 × 1020 cm-3 with abrupt P delta profiles is formed by the P-ALD process. Compared to the P-doped Ge buffer layer, a reduced PL intensity is observed, which might be caused by a higher density of point defects in the P delta doped Ge layer. The peak position is shifted by ∼0.1 eV towards lower energy, indicating an increased active carrier concentration in the P-delta doped Ge layer. By introducing annealing at 400 °C to 500 °C after each Ge spacer deposition, P desorption and diffusion is observed resulting in relatively uniform P profiles of ∼2 × 1019 cm-3. Increased PL intensity and red shift of the PL peak are observed due to improved crystallinity and higher active P concentration.
Yamamoto, Y., Nien, L.w., Capellini, G., Virgilio, M., Costina, I., Schubert, M.A., et al. (2017). Photoluminescence of phosphorus atomic layer doped Ge grown on Si. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 32(10), 104005 [10.1088/1361-6641/aa8499].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/323890
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