In this work we study, using experiments and theoretical modeling, the mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line, using fully qualified materials and methods. We show that these microstructures can be used as active lasing materials in mm-long Fabry-Perot cavities, taking advantage of strain-enhanced direct band gap recombination. The results of our study can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.
Capellini, G., Reich, C., Guha, S., Yamamoto, Y., Lisker, M., Virgilio, M., et al. (2014). Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process. OPTICS EXPRESS, 22(1), 399-410 [10.1364/OE.22.000399].
Tensile Ge microstructures for lasing fabricated by means of a silicon complementary metal-oxide-semiconductor process
CAPELLINI, GIOVANNI;
2014-01-01
Abstract
In this work we study, using experiments and theoretical modeling, the mechanical and optical properties of tensile strained Ge microstructures directly fabricated in a state-of-the art complementary metal-oxide-semiconductor fabrication line, using fully qualified materials and methods. We show that these microstructures can be used as active lasing materials in mm-long Fabry-Perot cavities, taking advantage of strain-enhanced direct band gap recombination. The results of our study can be realistically applied to the fabrication of a prototype platform for monolithic integration of near infrared laser sources for silicon photonics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.