In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured.
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., Di Gaspare, L., et al. (1998). Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si. APPLIED PHYSICS LETTERS, 72, 3175-3177 [10.1063/1.121584].
Metal-Semiconductor-Metal near infrared light detector based on epitaxial Ge on Si
ASSANTO, GAETANO;CAPELLINI, GIOVANNI;
1998-01-01
Abstract
In this letter we report on a metal-semiconductor-metal photodetector based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. The detector shows a good responsivity at normal incidence at both 1.3 and 1.55 mu m, with a maximum responsivity of 0.24 A/W at 1.3 mu m under a 1 V bias. A response time of about 2 ns has been measured.File in questo prodotto:
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