This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures.
Chahine, G.a., Zoellner, M.h., Richard M., I., Guha, S., Reich, C., Zaumseil, P., et al. (2015). Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy. APPLIED PHYSICS LETTERS, 106 [10.1063/1.4909529].
Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy
CAPELLINI, GIOVANNI;
2015-01-01
Abstract
This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
