Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishThis paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures.
Chahine GA, Zoellner MH, Richard M-I, Guha S, Reich C, Zaumseil P, et al. (2015). Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy. APPLIED PHYSICS LETTERS, 106.
| Titolo: | Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Rivista: | ||
| Citazione: | Chahine GA, Zoellner MH, Richard M-I, Guha S, Reich C, Zaumseil P, et al. (2015). Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy. APPLIED PHYSICS LETTERS, 106. | |
| Abstract: | This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures. | |
| Handle: | http://hdl.handle.net/11590/115327 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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