Benvenuti nell'Anagrafe della Ricerca d'Ateneo
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EnglishThis paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures.
Chahine GA, Zoellner MH, Richard M-I, Guha S, Reich C, Zaumseil P, et al. (2015). Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy. APPLIED PHYSICS LETTERS, 106 [10.1063/1.4909529].
| Titolo: | Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy | |
| Autori: | ||
| Data di pubblicazione: | 2015 | |
| Rivista: | ||
| Citazione: | Chahine GA, Zoellner MH, Richard M-I, Guha S, Reich C, Zaumseil P, et al. (2015). Strain and Lattice Orientation Distribution in SiN/Ge CMOS Compatible Light Emitting Microstructures by Quick X-ray Nano-diffraction Microscopy. APPLIED PHYSICS LETTERS, 106 [10.1063/1.4909529]. | |
| Abstract: | This paper presents a study of the spatial distribution of strain and lattice orientation in CMOS-fabricated strained Ge microstripes using high resolution x-ray micro-diffraction (µ-HRXRD). The recently developed model-free characterization tool, based on a quick scanning x-ray diffraction microscopy technique can image strain down to levels of 10-5 (Δa/a)with a spatial resolution of ~0.5 µm. Strain and lattice tilt are extracted using the strain and orientation calculation software package X-SOCS. The obtained results are compared with the biaxial strain distribution obtained by lattice parameter-sensitive µ-Raman and µ-photoluminescence measurements. The experimental data are interpreted with the help of finite element modeling (FEM) of the strain relaxation dynamics in the investigated structures. | |
| Handle: | http://hdl.handle.net/11590/115327 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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