The distributions of Sn concentration in GeSnSi layers formed on Ge substrate at various temperatures were investigated. High deposition temperature (Td) induces significant Sn migration and desorption, which have activation energies of 0.65 eV and 0.27 eV, respectively. A model quantitatively clarified the Sn migration fluxes during the deposition, which increase not only with increasing Td but also with the layer thickness. A non-negligible Sn flux compared with the supplied flux was found at 350 C at the surface of the 200-nm-thick layer. Consequently, designs of layer thickness and Td taking into account the appropriate Sn flux are important to form a GeSnSi layer with uniform Sn content for future optoelectronics.
Taoka, N., Asano, T., Yamaha, T., Terashima, T., Nakatsuka, O., Costina, I., et al. (2015). Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation. APPLIED PHYSICS LETTERS, 106 [10.1063/1.4908121].
Non-uniform depth distributions of Sn concentration induced by Sn migration and desorption during GeSnSi layer formation
CAPELLINI, GIOVANNI;
2015-01-01
Abstract
The distributions of Sn concentration in GeSnSi layers formed on Ge substrate at various temperatures were investigated. High deposition temperature (Td) induces significant Sn migration and desorption, which have activation energies of 0.65 eV and 0.27 eV, respectively. A model quantitatively clarified the Sn migration fluxes during the deposition, which increase not only with increasing Td but also with the layer thickness. A non-negligible Sn flux compared with the supplied flux was found at 350 C at the surface of the 200-nm-thick layer. Consequently, designs of layer thickness and Td taking into account the appropriate Sn flux are important to form a GeSnSi layer with uniform Sn content for future optoelectronics.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
