We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.

Fischer, I.a., Wendav, T., Augel, L., Jitpakdeebodin, S., Oliveira, F., Benedetti, A., et al. (2015). Growth and Characterization of SiGeSn Quantum Well Photodiodes. OPTICS EXPRESS, 23, 25048-25057 [10.1364/OE.23.025048].

Growth and Characterization of SiGeSn Quantum Well Photodiodes

CAPELLINI, GIOVANNI;
2015-01-01

Abstract

We report on the fabrication and electro-optical characterization of SiGeSn multi-quantum well PIN diodes. Two types of PIN diodes, in which two and four quantum wells with well and barrier thicknesses of 10 nm each are sandwiched between B- and Sb-doped Ge-regions, were fabricated as single-mesa devices, using a low-temperature fabrication process. We discuss measurements of the diode characteristics, optical responsivity and room-temperature electroluminescence and compare with theoretical predictions from band structure calculations.
Fischer, I.a., Wendav, T., Augel, L., Jitpakdeebodin, S., Oliveira, F., Benedetti, A., et al. (2015). Growth and Characterization of SiGeSn Quantum Well Photodiodes. OPTICS EXPRESS, 23, 25048-25057 [10.1364/OE.23.025048].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/116252
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