We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and unstrained Ge quantum dots deposited on Si(001) and Si(111). The local structure around Ce was probed by using Ge K-edge X-ray absorption spectroscopy; complementary evidence for intermixing was provided by AFM and STM studies. These results implied that the strain energy in the dots was reduced by Si atoms diffusing into the dots, resulting in a modified form of Stranski-Krastanov growth.

Boscherini, F., Capellini, G., Di Gaspare, L., De Seta, M., Rosei, F., Sgarlata, A., et al. (2000). Ge-Si intermixing in Ge quantum dots on Si. THIN SOLID FILMS, 380, 173-175 [10.1016/S0040-6090(00)01496-6].

Ge-Si intermixing in Ge quantum dots on Si

CAPELLINI, GIOVANNI;MOBILIO, Settimio
2000-01-01

Abstract

We have provided direct evidence for the presence of considerable Si-Ge intermixing in strained and unstrained Ge quantum dots deposited on Si(001) and Si(111). The local structure around Ce was probed by using Ge K-edge X-ray absorption spectroscopy; complementary evidence for intermixing was provided by AFM and STM studies. These results implied that the strain energy in the dots was reduced by Si atoms diffusing into the dots, resulting in a modified form of Stranski-Krastanov growth.
2000
Boscherini, F., Capellini, G., Di Gaspare, L., De Seta, M., Rosei, F., Sgarlata, A., et al. (2000). Ge-Si intermixing in Ge quantum dots on Si. THIN SOLID FILMS, 380, 173-175 [10.1016/S0040-6090(00)01496-6].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/117672
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 46
  • ???jsp.display-item.citation.isi??? 44
social impact