Heterostructures formed by epitaxial Ge grown in situ on Si(100) substrates were characterized by photoelectric yield spectroscopy, UPS and XPS. It is shown that both substrate and overlayer valence-band tops can be identified in the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence band discontinuity of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism, A considerably larger offset is obtained from the analysis of the XPS data.
Di Gaspare, L., Capellini, G., Sebastiani, M., Chudoba, C., Evangelisti, F. (1996). Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation. APPLIED SURFACE SCIENCE, 102, 94-97 [10.1016/0169-4332(96)00027-X].
Ge/Si(100) heterostructures: a Photoemission and low-energy Yield Spectroscopy investigation
CAPELLINI, GIOVANNI;
1996-01-01
Abstract
Heterostructures formed by epitaxial Ge grown in situ on Si(100) substrates were characterized by photoelectric yield spectroscopy, UPS and XPS. It is shown that both substrate and overlayer valence-band tops can be identified in the photoelectric-yield spectrum, thus allowing a direct and precise determination of the band lineup. We find a valence band discontinuity of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism, A considerably larger offset is obtained from the analysis of the XPS data.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.