DI GASPARE, L., G., S., E., P., K., A., F., E., G., B., et al. (2002). Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 89, 346.

Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates

DI GASPARE, LUCIANA;
2002-01-01

2002
DI GASPARE, L., G., S., E., P., K., A., F., E., G., B., et al. (2002). Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 89, 346.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/118055
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