To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programmed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH2+H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH2+H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.
Scappucci, G., Warschkow, O., Capellini, G., Klesse, W.m., Mckenzie, D.r., Simmons, M.y. (2012). N-type doping of germanium from phosphine: early stages resolved at the atomic level. PHYSICAL REVIEW LETTERS, 109 [10.1103/PhysRevLett.109.076101].
N-type doping of germanium from phosphine: early stages resolved at the atomic level
CAPELLINI, GIOVANNI;
2012-01-01
Abstract
To understand the atomistic doping process of phosphorus in germanium, we present a combined scanning tunneling microscopy, temperature programmed desorption, and density functional theory study of the reactions of phosphine with the Ge(001) surface. Combining experimental and theoretical results, we demonstrate that PH2+H with a footprint of one Ge dimer is the only product of room temperature chemisorption. Further dissociation requires thermal activation. At saturation coverage, PH2+H species self-assemble into ordered patterns leading to phosphorus coverages of up to 0.5 monolayers.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
