We present a new experimental method for determining band lineups at the semiconductor heterojunctions and apply it to the c-Si(100)/a-Si:H heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum due to the high escape depth and the high dynamical range of the technique, thus allowing a direct and precise determination of the band lineup. A value of Delta E(V) = 0.44 +/- 0.02 eV was found for the valence band discontinuity.
Sebastiani, M., Di Gaspare, L., Capellini, G., Bittencourt, C., Evangelisti, F. (1995). Low energy Yield Spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure. PHYSICAL REVIEW LETTERS, 75, 3352-3355 [10.1103/PhysRevLett.75.3352].
Low energy Yield Spectroscopy as a novel technique for determining band offsets: application to the c-Si/a-Si:H heterostructure
CAPELLINI, GIOVANNI;
1995-01-01
Abstract
We present a new experimental method for determining band lineups at the semiconductor heterojunctions and apply it to the c-Si(100)/a-Si:H heterostructure. This method uses a modern version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum due to the high escape depth and the high dynamical range of the technique, thus allowing a direct and precise determination of the band lineup. A value of Delta E(V) = 0.44 +/- 0.02 eV was found for the valence band discontinuity.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
