In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.

De Seta, M., Capellini, G., Busby, Y., Evangelisti, F., Ortolani, M., Virgilio, M., et al. (2009). Conduction band intersubband transitions in Ge/SiGe quantum wells. APPLIED PHYSICS LETTERS, 95(5) [10.1063/1.3198204].

Conduction band intersubband transitions in Ge/SiGe quantum wells

CAPELLINI, GIOVANNI;
2009-01-01

Abstract

In this letter we present the experimental evidence of intersubband absorption in the conduction band of compressively strained germanium quantum wells bounded by Ge-rich SiGe barriers. The measured absorption energies are in the terahertz range and are interpreted by means of tight binding calculations which include self-consistent band-bending and depolarization effects. From the comparison of experimental and numerical results a conduction band offset along the L line of about 120 meV has been estimated for the studied heterostructures.
2009
De Seta, M., Capellini, G., Busby, Y., Evangelisti, F., Ortolani, M., Virgilio, M., et al. (2009). Conduction band intersubband transitions in Ge/SiGe quantum wells. APPLIED PHYSICS LETTERS, 95(5) [10.1063/1.3198204].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/119881
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