We demonstrate that phosphorous atomic layer doping in ultra-high vacuum is a viable method to obtain n-type doping of strained germanium-on-insulator thin films. By engineering single and multiple, closely-spaced P d-layers, we obtain high active electron concentrations (11020 cm3)and low electrical resistivity (120X/square) whilst keeping control over doping profile, structural integrity, and tensile strain levels (e¼0.35%). Investigation of magnetotransport over a large temperature range (1.7-290 K) allows observation of two-dimensional electrons’ weak localization 16 up to 30 K.

Klesse, W.m., Scappucci, G., Capellini, G., Hartmann, J.m., Simmons, M.y. (2013). Atomic layer doping of strained Ge-on-insulator thin films with high electron densities. APPLIED PHYSICS LETTERS, 102.

Atomic layer doping of strained Ge-on-insulator thin films with high electron densities

CAPELLINI, GIOVANNI;
2013-01-01

Abstract

We demonstrate that phosphorous atomic layer doping in ultra-high vacuum is a viable method to obtain n-type doping of strained germanium-on-insulator thin films. By engineering single and multiple, closely-spaced P d-layers, we obtain high active electron concentrations (11020 cm3)and low electrical resistivity (120X/square) whilst keeping control over doping profile, structural integrity, and tensile strain levels (e¼0.35%). Investigation of magnetotransport over a large temperature range (1.7-290 K) allows observation of two-dimensional electrons’ weak localization 16 up to 30 K.
2013
Klesse, W.m., Scappucci, G., Capellini, G., Hartmann, J.m., Simmons, M.y. (2013). Atomic layer doping of strained Ge-on-insulator thin films with high electron densities. APPLIED PHYSICS LETTERS, 102.
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/122957
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