We demonstrate that phosphorous atomic layer doping in ultra-high vacuum is a viable method to obtain n-type doping of strained germanium-on-insulator thin films. By engineering single and multiple, closely-spaced P d-layers, we obtain high active electron concentrations (11020 cm3)and low electrical resistivity (120X/square) whilst keeping control over doping profile, structural integrity, and tensile strain levels (e¼0.35%). Investigation of magnetotransport over a large temperature range (1.7-290 K) allows observation of two-dimensional electrons’ weak localization 16 up to 30 K.
Klesse, W.m., Scappucci, G., Capellini, G., Hartmann, J.m., Simmons, M.y. (2013). Atomic layer doping of strained Ge-on-insulator thin films with high electron densities. APPLIED PHYSICS LETTERS, 102.
Atomic layer doping of strained Ge-on-insulator thin films with high electron densities
CAPELLINI, GIOVANNI;
2013-01-01
Abstract
We demonstrate that phosphorous atomic layer doping in ultra-high vacuum is a viable method to obtain n-type doping of strained germanium-on-insulator thin films. By engineering single and multiple, closely-spaced P d-layers, we obtain high active electron concentrations (11020 cm3)and low electrical resistivity (120X/square) whilst keeping control over doping profile, structural integrity, and tensile strain levels (e¼0.35%). Investigation of magnetotransport over a large temperature range (1.7-290 K) allows observation of two-dimensional electrons’ weak localization 16 up to 30 K.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
