In the present work we investigate photo-detectors based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. By using this procedure it was possible to grow films having thicknesses comparable with light penetration depth in the 1.3-1.6 μm spectral range. The films exhibited flatness on the atomic scale. Two kinds of detectors were investigated: vertical heterojunction diodes and a planar Metal-Semiconductor-Metal structure. The detectors show a good responsivity at normal incidence at both 1.3 and 1.55 μm. The photocurrent increases with the voltage applied, reaching a maximum responsivity of 0.24 A/W at 1.3 μm under a bias of 1 V. A complete optoelectronic characterization of the fabricated devices is performed. The results confirm the feasibility of the proposed approach for the fabrication of 1.3-1.55 μm near infrared photodetectors integrated on silicon chips.

Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., DI GASPARE, L., et al. (1998). Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100). MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 486, 193-198.

Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100)

ASSANTO, GAETANO;DI GASPARE, LUCIANA;
1998

Abstract

In the present work we investigate photo-detectors based on thick relaxed Ge layers, epitaxially grown on silicon after insertion of a low-temperature-grown Ge buffer layer. By using this procedure it was possible to grow films having thicknesses comparable with light penetration depth in the 1.3-1.6 μm spectral range. The films exhibited flatness on the atomic scale. Two kinds of detectors were investigated: vertical heterojunction diodes and a planar Metal-Semiconductor-Metal structure. The detectors show a good responsivity at normal incidence at both 1.3 and 1.55 μm. The photocurrent increases with the voltage applied, reaching a maximum responsivity of 0.24 A/W at 1.3 μm under a bias of 1 V. A complete optoelectronic characterization of the fabricated devices is performed. The results confirm the feasibility of the proposed approach for the fabrication of 1.3-1.55 μm near infrared photodetectors integrated on silicon chips.
Colace, L., Masini, G., Galluzzi, F., Assanto, G., Capellini, G., DI GASPARE, L., et al. (1998). Near infrared light detectors based on UHV-CVD epitaxial Ge on Si (100). MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS, 486, 193-198.
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/123085
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 4
  • ???jsp.display-item.citation.isi??? 1
social impact