L. DI GASPARE, G. SCAPPUCCI, E. PALANGE, K. ALFARAMAWI, EVANGELISTI F, G. BARUCCA, et al. (2002). Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 89, 346-349.
Titolo: | Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates |
Autori: | |
Data di pubblicazione: | 2002 |
Rivista: | |
Citazione: | L. DI GASPARE, G. SCAPPUCCI, E. PALANGE, K. ALFARAMAWI, EVANGELISTI F, G. BARUCCA, et al. (2002). Electrical properties of high-mobility two-dimensional electron gases in Si/SiGe modulation-doped heterostructures grown on silicon-on-insulator substrates. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 89, 346-349. |
Handle: | http://hdl.handle.net/11590/134424 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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