Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishWe have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ~0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strain
Capellini G, Kozlowski G, Yamamoto Y, Lisker M, Wenger C, Niu G, et al. (2013). Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach. JOURNAL OF APPLIED PHYSICS, 113.
| Titolo: | Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach | |
| Autori: | ||
| Data di pubblicazione: | 2013 | |
| Rivista: | ||
| Citazione: | Capellini G, Kozlowski G, Yamamoto Y, Lisker M, Wenger C, Niu G, et al. (2013). Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach. JOURNAL OF APPLIED PHYSICS, 113. | |
| Abstract: | We have analyzed the strain distribution and the photoluminescence in Ge microstructures fabricated by means of a Si-CMOS compatible method. The tensile strain in the Ge microstructures is obtained by using a SiN stressor layer. Different shapes of microstructure, allowing the Ge layers to freely expand into one, two, or three dimensions, resulted in different strain distribution profiles. Maximal equivalent biaxial tensile strain values up to ~0.8% have been measured. Room temperature photoluminescence emission has been observed and attributed to direct-band gap recombination spectrally shifted by tensile strain | |
| Handle: | http://hdl.handle.net/11590/134659 | |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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