Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe two-dimensional electron gas in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak line shape clearly shows deviations from the predictions of ballistic weak localization theory.
Scappucci, G., DI GASPARE, L., Evangelisti, F., Giovine, E., Notargiacomo, A., Leoni, R., et al. (2005). Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 71(24) [10.1103/PhysRevB.71.245311].
Low field magnetotransport in strained Si/SiGe cavities RID C-7045-2008
DI GASPARE, LUCIANA;
2005-01-01
Abstract
Low field magnetotransport revealing signatures of ballistic transport effects in strained Si/SiGe cavities is investigated. We fabricated strained Si/SiGe cavities by confining a high mobility Si/SiGe two-dimensional electron gas in a bended nanowire geometry defined by electron-beam lithography and reactive ion etching. The main features observed in the low temperature magnetoresistance curves are the presence of a zero-field magnetoresistance peak and of an oscillatory structure at low fields. By adopting a simple geometrical model we explain the oscillatory structure in terms of electron magnetic focusing. A detailed examination of the zero-field peak line shape clearly shows deviations from the predictions of ballistic weak localization theory.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
