Modeling of edge-emitting lasers based ontensile strained Germanium microstrips

In this paper we present a thorough modeling of an edge-emitting laser based on strained germanium microstrips. The full band structure of the tensile strained Germanium (Ge) layer enters the calculation of optical properties. Material gain for strained Ge is used in the two-dimensional simulation of the carrier transport and of the optical field within a cross section of the microstrips orthogonal to the optical cavity. We study optoelectronic properties of the device for two different designs. The simulation results are very promising as they show feasible ways towards Ge emitter devices with lower threshold currents and higher efficiency as published insofar.