Benvenuti nell'Anagrafe della Ricerca d'Ateneo
La valutazione delle attività di ricerca che si svolgono nelle università ha assunto un'importanza rilevante sia per l'intero sistema universitario sia all'interno di ogni singolo ateneo. Roma Tre si è quindi dotata di idonei strumenti informativi in grado di supportare al meglio le azioni di monitoraggio e di valutazione delle attività di ricerca svolte nei propri dipartimentied ha realizzato una Anagrafe della Ricerca di Ateneo.
EnglishThe achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3.
Mattoni G, Klesse WM, Capellini G, Simmons MY, & Scappucci G (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316.
| Titolo: | Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities |
| Autori: | |
| Data di pubblicazione: | 2013 |
| Rivista: | |
| Citazione: | Mattoni G, Klesse WM, Capellini G, Simmons MY, & Scappucci G (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316. |
| Abstract: | The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3. |
| Handle: | http://hdl.handle.net/11590/138562 |
| Appare nelle tipologie: | 1.1 Articolo in rivista |
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