The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3.
Mattoni G, Klesse WM, Capellini G, Simmons MY, & Scappucci G (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316 [10.1021/nn4051634].
Titolo: | Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities | |
Autori: | ||
Data di pubblicazione: | 2013 | |
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Citazione: | Mattoni G, Klesse WM, Capellini G, Simmons MY, & Scappucci G (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316 [10.1021/nn4051634]. | |
Abstract: | The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3. | |
Handle: | http://hdl.handle.net/11590/138562 | |
Appare nelle tipologie: | 1.1 Articolo in rivista |