The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3.

Mattoni, G., Klesse, W.m., Capellini, G., Simmons, M.y., Scappucci, G. (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316 [10.1021/nn4051634].

Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities

CAPELLINI, GIOVANNI;
2013-01-01

Abstract

The achievement of controlled high n-type doping in Ge will enable the fabrication of a number of innovative nano-electronic and photonic devices. In this work we present a combined scanning tunneling microscopy, secondary ions mass spectrometry, and magnetotransport study to understand the atomistic doping process of Ge by P2 molecules. Harnessing the one-dimer footprint of P2 molecules on the Ge(001) surface, we achieved the incorporation of a full P monolayer in Ge using a relatively low process temperature. The consequent formation of P-P dimers, however, limits electrical activation above a critical donor density corresponding to P-P spacing of less than a single dimer row. With this insight, tuning of doping parameters allows us to repeatedly stack such 2D P layers to achieve 3D electron densities up to ~2×10^20 cm^-3.
Mattoni, G., Klesse, W.m., Capellini, G., Simmons, M.y., Scappucci, G. (2013). Phosphorus Molecules on Ge(001): A Playground for Controlled N-Doping of Germanium at High Densities. ACS NANO, 7, 11310-11316 [10.1021/nn4051634].
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/138562
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 23
  • ???jsp.display-item.citation.isi??? 21
social impact