We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of −14.2 dBm (10−12 bit error rate (BER)) at 10 Gbps and 1550 nm.
Masini G, Sahni S, Capellini G, Witzens J, & Gunn C (2008). High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process. ADVANCES IN OPTICAL TECHNOLOGIES, 2008.
Titolo: | High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process |
Autori: | |
Data di pubblicazione: | 2008 |
Rivista: | |
Citazione: | Masini G, Sahni S, Capellini G, Witzens J, & Gunn C (2008). High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process. ADVANCES IN OPTICAL TECHNOLOGIES, 2008. |
Abstract: | We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of −14.2 dBm (10−12 bit error rate (BER)) at 10 Gbps and 1550 nm. |
Handle: | http://hdl.handle.net/11590/139677 |
Appare nelle tipologie: | 1.1 Articolo in rivista |
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