We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of −14.2 dBm (10−12 bit error rate (BER)) at 10 Gbps and 1550 nm.

Masini, G., Sahni, S., Capellini, G., Witzens, J., Gunn, C. (2008). High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process. ADVANCES IN OPTICAL TECHNOLOGIES, 2008 [10.1155/2008/196572].

High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process

CAPELLINI, GIOVANNI;
2008

Abstract

We discuss our approach to monolithic intergration of Ge photodectors with CMOS electronics for high-speed optical transceivers. Receivers based on Ge waveguide photodetectors achieve a sensitivity of −14.2 dBm (10−12 bit error rate (BER)) at 10 Gbps and 1550 nm.
Masini, G., Sahni, S., Capellini, G., Witzens, J., Gunn, C. (2008). High-Speed Near Infrared Optical Receivers Based on Ge Waveguide Photodetectors Integrated in a CMOS Process. ADVANCES IN OPTICAL TECHNOLOGIES, 2008 [10.1155/2008/196572].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/139677
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