We review our recent research into n-type doping of Ge for nanoelectronics and integrated photonics.We demonstrate a doping method in ultra-high vacuum to achieve high electron concentrations in Ge while maintaining atomic-level control of the doping process. We integrated this doping technique with ultrahigh vacuum scanning tunneling microscope lithography and femtosecond laser ablation micron-scale lithography, and demonstrated basic components of donor-based nanoelectronic circuitry such as wires and tunnel gaps. By repetition of controlled doping cycles we have shown that stacking of multiple Ge:P two-dimensional electron gases results in high electron densities in Ge (>1020 cm3). Because of the strong vertical electron confinement, closely stacked 2D layers – although interacting – maintain their individuality in terms of electron transport. These results bode well towards the realization of nanoscale 3D epitaxial circuits in Ge comprising stacked 2DEGs and/or atomic-scale Ge:P devices with confinement in more dimensions.

Scappucci, G., Capellini, G., Klesse, W.m., Simmons, M.y. (2013). New avenues to an old material: controlled nanoscale doping of germanium. NANOSCALE, 5, 2600-2615 [10.1039/C3NR34258A].

New avenues to an old material: controlled nanoscale doping of germanium

CAPELLINI, GIOVANNI;
2013-01-01

Abstract

We review our recent research into n-type doping of Ge for nanoelectronics and integrated photonics.We demonstrate a doping method in ultra-high vacuum to achieve high electron concentrations in Ge while maintaining atomic-level control of the doping process. We integrated this doping technique with ultrahigh vacuum scanning tunneling microscope lithography and femtosecond laser ablation micron-scale lithography, and demonstrated basic components of donor-based nanoelectronic circuitry such as wires and tunnel gaps. By repetition of controlled doping cycles we have shown that stacking of multiple Ge:P two-dimensional electron gases results in high electron densities in Ge (>1020 cm3). Because of the strong vertical electron confinement, closely stacked 2D layers – although interacting – maintain their individuality in terms of electron transport. These results bode well towards the realization of nanoscale 3D epitaxial circuits in Ge comprising stacked 2DEGs and/or atomic-scale Ge:P devices with confinement in more dimensions.
Scappucci, G., Capellini, G., Klesse, W.m., Simmons, M.y. (2013). New avenues to an old material: controlled nanoscale doping of germanium. NANOSCALE, 5, 2600-2615 [10.1039/C3NR34258A].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/141245
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