We have developed a dual-step encapsulation process for phosphorus in germanium delta-layers with initial low-temperature encapsulation to suppress dopant redistribution, followed by a higher temperature overgrowth to improve crystalline quality and electrical transport properties. Structural and electrical characterization shows that encapsulation of the delta-layer with a 2-nm-thick Ge layer deposited at 350 degrees C followed by Ge growth at 530 degrees C confines P donors into an atomically flat layer with limited dopant segregation, high carrier concentration and low resistivity. This doping method is promising for the fabrication of ultra-shallow junctions. (C) 2010 Elsevier B.V. All rights reserved.
Scappucci, G., Capellini, G., Klesse, W.m., Simmons, M.y. (2011). Dual-temperature encapsulation of phosphorus in germanium delta-layers toward ultra-shallow junctions. JOURNAL OF CRYSTAL GROWTH, 316(1), 81-84 [10.1016/j.jcrysgro.2010.12.046].
Dual-temperature encapsulation of phosphorus in germanium delta-layers toward ultra-shallow junctions
CAPELLINI, GIOVANNI;
2011-01-01
Abstract
We have developed a dual-step encapsulation process for phosphorus in germanium delta-layers with initial low-temperature encapsulation to suppress dopant redistribution, followed by a higher temperature overgrowth to improve crystalline quality and electrical transport properties. Structural and electrical characterization shows that encapsulation of the delta-layer with a 2-nm-thick Ge layer deposited at 350 degrees C followed by Ge growth at 530 degrees C confines P donors into an atomically flat layer with limited dopant segregation, high carrier concentration and low resistivity. This doping method is promising for the fabrication of ultra-shallow junctions. (C) 2010 Elsevier B.V. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
