Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultrahigh vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultranarrow 2-nm-wide layer with an electrically active sheet carrier concentration of 4x10(13) cm(-2) at 4.2 K. These results open up the possibility of ultranarrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.
Scappucci, G., Capellini, G., Lee, W., Simmons, M.y. (2009). Ultradense phosphorus in germanium delta-doped layers. APPLIED PHYSICS LETTERS, 94(16) [10.1063/1.3123391].
Ultradense phosphorus in germanium delta-doped layers
CAPELLINI, GIOVANNI;
2009-01-01
Abstract
Phosphorus (P) in germanium (Ge) delta-doped layers are fabricated in ultrahigh vacuum by adsorption of phosphine molecules onto an atomically flat clean Ge(001) surface followed by thermal incorporation of P into the lattice and epitaxial Ge overgrowth by molecular beam epitaxy. Structural and electrical characterizations show that P atoms are confined, with minimal diffusion, into an ultranarrow 2-nm-wide layer with an electrically active sheet carrier concentration of 4x10(13) cm(-2) at 4.2 K. These results open up the possibility of ultranarrow source/drain regions with unprecedented carrier densities for Ge n-channel field effect transistors.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
