We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si~100! self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500–850 °C range. The Si content inside the islands varies from 0% at 550 °C up to 72% at 850 °C. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for Tdep,600 °C up to 270 nm for Tdep5850 °C.
Capellini, G., De Seta, M., Evangelisti, F. (2001). SiGe intermixing in Ge/Si(100) islands. APPLIED PHYSICS LETTERS, 78, 303-305 [10.1063/1.1339263].
SiGe intermixing in Ge/Si(100) islands
CAPELLINI, GIOVANNI;
2001-01-01
Abstract
We have applied atomic force microscopy and x-ray photoemission spectroscopy to the study of SiGe intermixing in Ge/Si~100! self-assembled islands. We have quantified the Ge/Si alloying as a function of the deposition temperature in the 500–850 °C range. The Si content inside the islands varies from 0% at 550 °C up to 72% at 850 °C. As a consequence of the reduction of the effective mismatch due to the observed SiGe intermixing, the critical base width for island nucleation increases from 25 nm for Tdep,600 °C up to 270 nm for Tdep5850 °C.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
