We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modem version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.

Di Gaspare, L., Capellini, G., Chudoba, C., Sebastiani, M., Evangelisti, F. (1996). Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure. APPLIED SURFACE SCIENCE, 104, 595-600 [10.1016/S0169-4332(96)00208-5].

Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure

CAPELLINI, GIOVANNI;
1996-01-01

Abstract

We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modem version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.
1996
Di Gaspare, L., Capellini, G., Chudoba, C., Sebastiani, M., Evangelisti, F. (1996). Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure. APPLIED SURFACE SCIENCE, 104, 595-600 [10.1016/S0169-4332(96)00208-5].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/154769
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