We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modem version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.
Di Gaspare, L., Capellini, G., Chudoba, C., Sebastiani, M., Evangelisti, F. (1996). Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure. APPLIED SURFACE SCIENCE, 104, 595-600 [10.1016/S0169-4332(96)00208-5].
Low energy Yield Spectroscopy determination of band offsets: application to the epitaxial Ge/Si(100) heterostructure
CAPELLINI, GIOVANNI;
1996-01-01
Abstract
We apply a new experimental method for determining band lineups at the Ge/Si(100) heterostructure. This method uses a modem version of an old spectroscopy: the photoelectric yield spectroscopy excited with photons in the near UV range. It is shown that both substrate and overlayer valence-band tops can be identified in the yield spectrum, thus allowing a direct and precise determination of the band lineup. We find an offset of 0.36 +/- 0.02 eV for heterojunctions whose overlayers were grown according to the Stranski-Krastanov mechanism.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
