In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001). The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.

Scappucci, G., Capellini, G., Lee, W., Simmons, M.y. (2009). Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy. NANOTECHNOLOGY, 20(49) [10.1088/0957-4484/20/49/495302].

Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy

CAPELLINI, GIOVANNI;
2009-01-01

Abstract

In this paper we demonstrate atomic-scale lithography on hydrogen terminated Ge(001). The lithographic patterns were obtained by selectively desorbing hydrogen atoms from a H resist layer adsorbed on a clean, atomically flat Ge(001) surface with a scanning tunneling microscope tip operating in ultra-high vacuum. The influence of the tip-to-sample bias on the lithographic process have been investigated. Lithographic patterns with feature-sizes from 200 to 1.8 nm have been achieved by varying the tip-to-sample bias. These results open up the possibility of a scanning-probe lithography approach to the fabrication of future atomic-scale devices in germanium.
2009
Scappucci, G., Capellini, G., Lee, W., Simmons, M.y. (2009). Atomic-scale patterning of hydrogen terminated Ge(001) by scanning tunneling microscopy. NANOTECHNOLOGY, 20(49) [10.1088/0957-4484/20/49/495302].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/155393
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