We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta layer. We demonstrate that a step-flow growth achieved at similar to 530 degrees C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility similar to 128 cm(2)/Vs at a carrier density 1.3x10(14) cm(-2), and a 4.2 K phase coherence length of similar to 180 nm.
Scappucci, G., Capellini, G., Simmons, M.y. (2009). Influence of encapsulation temperature on Ge:P delta-doped layers. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 80(23) [10.1103/PhysRevB.80.233202].
Influence of encapsulation temperature on Ge:P delta-doped layers
CAPELLINI, GIOVANNI;
2009-01-01
Abstract
We present a systematic study of the influence of the encapsulation temperature on dopant confinement and electrical properties of Ge:P delta-doped layers. For increasing growth temperature we observe an enhancement of the electrical properties accompanied by an increased segregation of the phosphorous donors, resulting in a slight broadening of the delta layer. We demonstrate that a step-flow growth achieved at similar to 530 degrees C provides the best compromise between high crystal quality and minimal dopant redistribution, with an electron mobility similar to 128 cm(2)/Vs at a carrier density 1.3x10(14) cm(-2), and a 4.2 K phase coherence length of similar to 180 nm.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
