We discuss the effect of the deposition of a Si cap layer on the composition and morphological properties of Ge(Si)/Si(001) self-assembled islands deposited by chemical vapor deposition at 750 degrees C. The morphological evolution of the island shape was investigated by means of atomic force microscopy and the actual island composition has been measured by means of x-ray photoemission spectroscopy and x-ray absorption spectroscopy techniques. At an early stage of Si capping, Si atoms are incorporated in the island layer. As a consequence, we observe a reverse Stranski-Krastanov growth dynamics in agreement with the volume-composition stability diagram proposed for domes, pyramids, and prepyramids in the GexSi1-x/Si(100) system. We find that the island burying begins when the Ge average composition reaches the value x=0.28. Once the islands are buried under a thin silicon layer their composition is unaffected by subsequent silicon deposition. We conclude that strain relief, rather than thermal diffusion, is the main driving force for the observed Ge-Si alloying. (c) 2005 American Institute of Physics. (c) 2005 American Institute of Physics.

Capellini G, De Seta M, Di Gaspare L, Evangelisti F, & d'Acapito F (2005). Evolution of Ge/Si(001) islands during Si capping at high temperature. JOURNAL OF APPLIED PHYSICS, 98(12) [10.1063/1.2141652].

Evolution of Ge/Si(001) islands during Si capping at high temperature

DE SETA, Monica;DI GASPARE, LUCIANA;
2005

Abstract

We discuss the effect of the deposition of a Si cap layer on the composition and morphological properties of Ge(Si)/Si(001) self-assembled islands deposited by chemical vapor deposition at 750 degrees C. The morphological evolution of the island shape was investigated by means of atomic force microscopy and the actual island composition has been measured by means of x-ray photoemission spectroscopy and x-ray absorption spectroscopy techniques. At an early stage of Si capping, Si atoms are incorporated in the island layer. As a consequence, we observe a reverse Stranski-Krastanov growth dynamics in agreement with the volume-composition stability diagram proposed for domes, pyramids, and prepyramids in the GexSi1-x/Si(100) system. We find that the island burying begins when the Ge average composition reaches the value x=0.28. Once the islands are buried under a thin silicon layer their composition is unaffected by subsequent silicon deposition. We conclude that strain relief, rather than thermal diffusion, is the main driving force for the observed Ge-Si alloying. (c) 2005 American Institute of Physics. (c) 2005 American Institute of Physics.
Capellini G, De Seta M, Di Gaspare L, Evangelisti F, & d'Acapito F (2005). Evolution of Ge/Si(001) islands during Si capping at high temperature. JOURNAL OF APPLIED PHYSICS, 98(12) [10.1063/1.2141652].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/155566
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