We present morphological and electrical characterizations of thin and narrow resistors obtained by focused ion beam assisted deposition of Pt based material. For thin and narrow depositions the measured thickness and width are significantly different from the nominal values. From leakage tests we found that in order to have electrically insulated parallel resistors at room temperature, it is mandatory that the Pt-halo, which results from the deposition procedure, has a thickness well below 6 nm. (C) 2008 Elsevier Ltd. All rights reserved.
Notargiacomo, A., DI GASPARE, L., Evangelisti, F. (2009). Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures. SUPERLATTICES AND MICROSTRUCTURES, 46(1-2), 149-152 [10.1016/j.spmi.2008.11.013].
Ion beam assisted processes for Pt nanoelectrode fabrication onto 1-D nanostructures
DI GASPARE, LUCIANA;
2009-01-01
Abstract
We present morphological and electrical characterizations of thin and narrow resistors obtained by focused ion beam assisted deposition of Pt based material. For thin and narrow depositions the measured thickness and width are significantly different from the nominal values. From leakage tests we found that in order to have electrically insulated parallel resistors at room temperature, it is mandatory that the Pt-halo, which results from the deposition procedure, has a thickness well below 6 nm. (C) 2008 Elsevier Ltd. All rights reserved.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
