We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.
Rajamani, S., Sorianello, V., De Iacovo, A., Colace, L. (2014). Simulations of Ge based optically controlled field effect transistors. In Group IV Photonics (GFP), 2014 IEEE 11th International Conference on (pp.199-200). Piscataway (NJ) : IEEE [10.1109/Group4.2014.6961989].
Simulations of Ge based optically controlled field effect transistors
De Iacovo A;COLACE, Lorenzo
2014-01-01
Abstract
We report on the simulation of Optically Controlled Field Effect Transistors (OCFET) based on a MOSFET with a Germanium gate. We study the static and dynamic characteristics of the device under near infrared light at 1.55 μm and investigate its operation as a digital inverter.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
