We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.
Colace, L., Bronzoni, M., De Iacovo, A., Frigeri, P., Gombia, E., Maragliano, C., et al. (2014). Single-crystal CuInl-xGaxSe2 films grown on lattice matched Ge by low-temperature Pulsed Electron Deposition technique. In Photonics Technologies, 2014 Fotonica AEIT Italian Conference on (pp.1-4) [10.1109/Fotonica.2014.6843938].
Single-crystal CuInl-xGaxSe2 films grown on lattice matched Ge by low-temperature Pulsed Electron Deposition technique
COLACE, Lorenzo;De Iacovo A;
2014-01-01
Abstract
We report on the epitaxial growth of Cu(In,Ga)Se2 (CIGS) thin films on n-type Ge substrates using the Pulsed Electron Deposition (PED) technique. Single-crystal films with smooth interface and no dislocations were obtained at a substrate temperature of 300°C with thickness above 1.5μm. CIGS/Ge epilayers were characterized in terms of Transmission Electron Microscopy, X-Ray Diffraction and Photoluminescence. Preliminary results are very promising for a variety of potential applications as absorber layer in single and multi-junction thin-film solar cells.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
