Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies.
Calvani, P., Sinisi, F., Rossi, M.C., Conte, G., Giovine, E., Ciccognani, W., et al. (2009). MESFETs on H-terminated polycrystalline diamond. In ULIS 2009: 10TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION OF SILICON (pp.257-260) [10.1109/ULIS.2009.4897585].
MESFETs on H-terminated polycrystalline diamond
ROSSI, Maria Cristina;Conte, G.;
2009-01-01
Abstract
Metal-Semiconductor Field Effect Transistors (MESFETs) were fabricated on polycrystalline diamond. Devices were realized to be employed in Microwave Integrated Circuits for satellite communications and high frequency power amplification, areas were diamond promise the replacement of vacuum electronics. Fabricated MESFETs typically showed high drain-source current (140 ma/mm) and large transconductance values (50 ms/mm), with a cut off frequency ft=10 GHz and a maximum oscillation frequency, fmax, up to 35 GHz. These values suggest device microwave operation and are obtained through the fabrication of devices with geometry and active region dimensions (200-500 nm gate length) compatible with available microelectronic technologies.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
