Surface channel MESFETs with submicron gate length (325-500 nm) were realized on hydrogen terminated polycrystalline diamond having 1-2 m average grain size. Device operation were characterized both in dc and under rf excitation. Typical maximum drain current values normalized to the gate width was higher then 35 mA/mm with transconductance maximum values of about 5 mS/mm. In the rf regime, a maximum current gain cut off frequency of 1.5 GHz and a maximum power gain frequencies of 5.2 GHz are obtained.
F., S., L., M., Rossi, M.C., Conte, G., E., L., S., L., et al. (2008). Sub-micron gate length MESFET on hydrogen terminated polycrystalline diamond. In 11TH INTERNATIONAL SYMPOSIUM ON MICROWAVE AND OPTICAL TECHNOLOGY – ISMOT 2007 (pp.235-242). Roma : Aracne Editrice.
Sub-micron gate length MESFET on hydrogen terminated polycrystalline diamond
ROSSI, Maria Cristina
Writing – Review & Editing
;CONTE, GennaroWriting – Original Draft Preparation
;
2008-01-01
Abstract
Surface channel MESFETs with submicron gate length (325-500 nm) were realized on hydrogen terminated polycrystalline diamond having 1-2 m average grain size. Device operation were characterized both in dc and under rf excitation. Typical maximum drain current values normalized to the gate width was higher then 35 mA/mm with transconductance maximum values of about 5 mS/mm. In the rf regime, a maximum current gain cut off frequency of 1.5 GHz and a maximum power gain frequencies of 5.2 GHz are obtained.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
