Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.
Calvani, P., Corsaro, A., Sinisi, F., Rossi, M.C., Conte, G., Carta, S., et al. (2009). Microwave performance of surface channel diamond MESFETs. In Nanotechnology Materials and Devices Conference, 2009. NMDC '09. IEEE (pp.200-204) [10.1109/NMDC.2009.5167575].
Microwave performance of surface channel diamond MESFETs
ROSSI, Maria Cristina;CONTE, Gennaro
2009-01-01
Abstract
Sub-micron gate length Metal Semiconductor Field Effect Transistors (MESFETs) have been realized on polycrystalline diamond samples supplied by Element Six Ltd. and by Russian Academy of Science. RF performances are shown for devices realized on polycrystalline diamond samples of different quality, stating the successfully improvement and reliability of realization technology.File in questo prodotto:
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