""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""

Kopp, V.s., Kaganer, V.m., Capellini, G., DE SETA, M., & Zaumseil, P. (2012). X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85(24) [10.1103/PhysRevB.85.245311].

X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates

CAPELLINI, GIOVANNI;DE SETA, Monica;
2012

Abstract

""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""
Kopp, V.s., Kaganer, V.m., Capellini, G., DE SETA, M., & Zaumseil, P. (2012). X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85(24) [10.1103/PhysRevB.85.245311].
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11590/278686
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