""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""
Kopp, V.s., Kaganer, V.m., Capellini, G., DE SETA, M., Zaumseil, P. (2012). X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates. PHYSICAL REVIEW. B, CONDENSED MATTER AND MATERIALS PHYSICS, 85(24) [10.1103/PhysRevB.85.245311].
X-ray diffraction study of plastic relaxation in Ge-rich SiGe virtual substrates
CAPELLINI, GIOVANNI;DE SETA, Monica;
2012-01-01
Abstract
""We report on the experimental and theoretical investigation of the relaxation in Ge-rich SiGe\\\/Ge\\\/Si heterostructures. The experimental x-ray diffraction data are interpreted with the help of a model including both edge and 60 degrees misfit dislocations in the calculated x-ray scattering intensity. Our results show that highly positionally correlated edge dislocations dominate in the relaxation of the compressive strain at the Ge\\\/Si interface, while a smaller tensile strain at the SiGe\\\/Ge interfaces released by uncorrelated\\\/little correlated 60 degrees dislocations.""I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
