""In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k center dot p model.""
DE SETA, M., Capellini, G., Ortolani, M., Virgilio, M., Grosso, G., Nicotra, G., et al. (2012). Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift. NANOTECHNOLOGY, 23(46) [10.1088/0957-4484/23/46/465708].
Narrow intersubband transitions in n-type Ge/SiGe multi-quantum wells: control of the terahertz absorption energy trough the temperature dependent depolarization shift
DE SETA, Monica;CAPELLINI, GIOVANNI;
2012-01-01
Abstract
""In this paper we present a detailed study of the intersubband absorption occurring between electron states confined in strained Ge multi-quantum wells as a function of the temperature. The high structural quality of the samples is reflected by the very narrow absorption line-shape constant with temperature. We observe a temperature driven charge transfer occurring between the ground and the first excited subband which, in turn, induces a change in the depolarization shift and consequently in the energy of the absorbance peak. The experimental observations are well accounted for by a multi-valley k center dot p model.""I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
