We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 degrees C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc2O3/Y2O3 buffer system a very promising template for the growth of high quality GaN layers on silicon.
Lupina, L., Zoellner, M.h., Niermann, T., Dietrich, B., Capellini, G., Thapa, S.b., et al. (2015). Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon. APPLIED PHYSICS LETTERS, 107, 201907 [10.1063/1.4935856].
Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon
CAPELLINI, GIOVANNI;
2015-01-01
Abstract
We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc2O3/Y2O3/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 degrees C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc2O3/Y2O3 buffer system a very promising template for the growth of high quality GaN layers on silicon.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
