Prominent resonance Raman and photoluminescence spectroscopic differences between AA′ and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Resonance Raman and photoluminescence spectra of AA′ and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom will be discussed.
Xia, M., Li, B.o., Yin, K., Capellini, G., Niu, G., Gong, Y., et al. (2015). Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2. ACS NANO, 9(12), 12246-12254 [10.1021/acsnano.5b05474].
Spectroscopic Signatures of AA' and AB Stacking of Chemical Vapor Deposited Bilayer MoS2
CAPELLINI, GIOVANNI;
2015-01-01
Abstract
Prominent resonance Raman and photoluminescence spectroscopic differences between AA′ and AB stacked bilayer molybdenum disulfide (MoS2) grown by chemical vapor deposition are reported. Bilayer MoS2 islands consisting of the two stacking orders were obtained under identical growth conditions. Resonance Raman and photoluminescence spectra of AA′ and AB stacked bilayer MoS2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom will be discussed.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
