We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates. © 2007 American Institute of Physics.

Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2007). Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation. In AIP Conference Proceedings (pp.241-242) [10.1063/1.2729858].

Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation

VERNA, ADRIANO;
2007

Abstract

We performed structural and electrical investigations on high temperature Fe implanted InP in order to correlate the lattice position of the implanted atoms after annealing treatments to their electrical activation as compensating deep traps. The overall results demonstrate that the Fe2+ deep trap activation properties are strictly connected to the annealing evolution of the lattice location of the Fe atoms in substitutional sites, which in turn is controlled by the background doping density in the substrates. © 2007 American Institute of Physics.
9780735403970
Cesca, T., Verna, A., Mattei, G., Gasparotto, A., Fraboni, B., Impellizzeri, G., et al. (2007). Electrical activation of Fe impurities introduced in III-V semiconductors by high temperature ion implantation. In AIP Conference Proceedings (pp.241-242) [10.1063/1.2729858].
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11590/307049
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