The structural and electrical characteristic properties of high temperature Fe implantation in InP, starting with lattice-matched GaInP/GaAs layers, were analyzed. The presence of atomic species with different masses in these materials may induce different phenomena with respect to the ones observed for InP and the different chemical environment and bandgap width may influence the optical properties of the Fe centers. High resolution X-ray diffraction measurements were also employed to complete the structural characterization. The results show that the electrical properties related to Fe implantation are studied by current-voltage measurements on mesa devices, and related to the different implantation and annealing conditions.
|Titolo:||Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs|
|Data di pubblicazione:||2004|
|Citazione:||Cesca, T., Gasparotto, A., Verna, A., Fraboni, B., Priolo, F., Tarricone, L., et al. (2004). Structural and electrical investigation of high temperature Fe implanted GaInP layers lattice matched to GaAs. In 2004 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS (pp.276-277).|
|Appare nelle tipologie:||4.1 Contributo in Atti di convegno|