In this paper we report on recrystallized amorphous hydrogenated germanium (a-Ge:H) thin film on polyimide to fabricate flexible near infrared (NIR) light sensitive resistors that can be used in flexible electronics. In this work we investigate the effect of pulsed excimer laser annealing of a-Ge:H thin films for fabrication of low temperature photo-detectors operating in the NIR.
Ferrone, A., Maiolo, L., Minotti, A., Pecora, A., Iacovo, D.e., Colace, L., et al. (2017). Flexible near infrared photoresistors based on recrystallized amorphous germanium thin films. In Proceedings of IEEE Sensors (pp.1-3). Institute of Electrical and Electronics Engineers Inc. [10.1109/ICSENS.2016.7808479].
Flexible near infrared photoresistors based on recrystallized amorphous germanium thin films
FERRONE, ANDREA;MAIOLO, LUCA;COLACE, Lorenzo;
2017-01-01
Abstract
In this paper we report on recrystallized amorphous hydrogenated germanium (a-Ge:H) thin film on polyimide to fabricate flexible near infrared (NIR) light sensitive resistors that can be used in flexible electronics. In this work we investigate the effect of pulsed excimer laser annealing of a-Ge:H thin films for fabrication of low temperature photo-detectors operating in the NIR.I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
